GA20SICP12-247 GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: TRANS SJT 1200V 45A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
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Технічний опис GA20SICP12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, Power Dissipation (Max): 282W (Tc), Supplier Device Package: TO-247AB, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V.
Інші пропозиції GA20SICP12-247
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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GA20SICP12-247 | Виробник : GeneSiC Semiconductor |
MOSFET 1200V 45A Std SIC CoPak |
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