G2K3N10L6 Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET 2N-CH 100V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-6L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.93 грн |
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Технічний опис G2K3N10L6 Goford Semiconductor
Description: MOSFET 2N-CH 100V 3A SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V, Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-6L.
Інші пропозиції G2K3N10L6 за ціною від 6.55 грн до 24.3 грн
| Фото | Назва | Виробник | Інформація |
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G2K3N10L6 | Виробник : Goford Semiconductor |
Description: MOSFET 2N-CH 100V 3A SOT23-6L Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-6L |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
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G2K3N10L6 | Виробник : Goford Semiconductor |
Description: MOSFET 2N-CH 100V 3A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-6L |
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