FZ1200R12HE4HOSA2 Infineon Technologies
Виробник: Infineon Technologies
IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled4 diode
IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled4 diode
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Технічний опис FZ1200R12HE4HOSA2 Infineon Technologies
Description: IGBT MODULE 1200V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1.2kA, NTC Thermistor: No, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1825 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 7150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 74 nF @ 25 V.
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Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FZ1200R12HE4HOSA2 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 1200A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1.2kA NTC Thermistor: No IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1825 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 7150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 74 nF @ 25 V |
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