Технічний опис FS75R12KE3BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 105A 350W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: NPT, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 105 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V.
Інші пропозиції FS75R12KE3BOSA1
Фото | Назва | Виробник | Інформація |
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FS75R12KE3BOSA1 | Виробник : Infineon Technologies |
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FS75R12KE3BOSA1 | Виробник : Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: NPT Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V |
товар відсутній |
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FS75R12KE3BOSA1 | Виробник : Infineon Technologies |
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товар відсутній |