Технічний опис FS200R07A1E3BOMA1 Infineon Technologies
Description: MODULE IGBT HYBRID PK, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: AG-HYBRID1-1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 790 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Інші пропозиції FS200R07A1E3BOMA1
Фото | Назва | Виробник | Інформація |
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FS200R07A1E3BOMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-HYBRID1-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 790 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
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