на замовлення 546 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.8 грн |
| 10+ | 221.2 грн |
| 25+ | 181.2 грн |
| 100+ | 154.71 грн |
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Технічний опис FQPF47P06YDTU onsemi / Fairchild
Description: MOSFET P-CH 60V 30A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Інші пропозиції FQPF47P06YDTU
| Фото | Назва | Виробник | Інформація |
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FQPF47P06YDTU | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220F Tube |
товар відсутній |
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FQPF47P06YDTU | Виробник : onsemi |
Description: MOSFET P-CH 60V 30A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
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FQPF47P06YDTU | Виробник : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; Idm: -120A; 62W Mounting: THT Case: TO220FP Kind of package: tube Pulsed drain current: -120A Power dissipation: 62W Gate charge: 110nC Polarisation: unipolar Drain current: -21.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 26mΩ |
товар відсутній |