FGL35N120FTDTU Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: HPM F2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
на замовлення 15510 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 426.01 грн |
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Технічний опис FGL35N120FTDTU Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 337 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A, Supplier Device Package: HPM F2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 34ns/172ns, Switching Energy: 2.5mJ (on), 1.7mJ (off), Test Condition: 600V, 35A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 368 W.
Інші пропозиції FGL35N120FTDTU за ціною від 426.01 грн до 521.46 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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FGL35N120FTDTU | Виробник : onsemi |
Description: IGBT TRENCH/FS 1200V 70A TO264-3 Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 337 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/172ns Switching Energy: 2.5mJ (on), 1.7mJ (off) Test Condition: 600V, 35A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 368 W |
на замовлення 2364 шт: термін постачання 21-31 дні (днів) |
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FGL35N120FTDTU | Виробник : ON Semiconductor / Fairchild |
IGBT Transistors 1200V 35A Trench IGBT |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
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| FGL35N120FTDTU | Виробник : ONSEMI |
Description: ONSEMI - FGL35N120FTDTU - IGBT, 1200V, 35A, FIELD STOP TRENCH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
на замовлення 2943 шт: термін постачання 21-31 дні (днів) |
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FGL35N120FTDTU | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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FGL35N120FTDTU | Виробник : onsemi |
Description: IGBT TRENCH/FS 1200V 70A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 337 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/172ns Switching Energy: 2.5mJ (on), 1.7mJ (off) Test Condition: 600V, 35A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 368 W |
товар відсутній |