FF225R12ME3BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Description: IGBT MOD 1200V 325A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 11090.91 грн |
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Технічний опис FF225R12ME3BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 325 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 16 nF @ 25 V.
Інші пропозиції FF225R12ME3BOSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FF225R12ME3BOSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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FF225R12ME3BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 325A 1150W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 325 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 16 nF @ 25 V |
товар відсутній |