Технічний опис FDS7288N3 FAIRCHILD
Description: MOSFET N-CH 30V 20A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20.5A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO FLMP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V.
Інші пропозиції FDS7288N3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDS7288N3 | Виробник : FAIRCHILD | 07+ SO-8 |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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FDS7288N3 | Виробник : FAIRCHILD | 0930+ SOP8 |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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FDS7288N3 | Виробник : ON Semiconductor | Trans MOSFET N-CH 30V 20A 8-Pin FLMP SOIC T/R |
товар відсутній |
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FDS7288N3 | Виробник : onsemi |
Description: MOSFET N-CH 30V 20A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20.5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V |
товар відсутній |
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FDS7288N3 | Виробник : onsemi |
Description: MOSFET N-CH 30V 20A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20.5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V |
товар відсутній |