Технічний опис FDPF51N25RDTU onsemi / Fairchild
Description: MOSFET N-CH 250V 51A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F (LG-Formed), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V.
Інші пропозиції FDPF51N25RDTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FDPF51N25RDTU | Виробник : ON Semiconductor |
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на замовлення 750 шт: термін постачання 14-28 дні (днів) |
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FDPF51N25RDTU | Виробник : ON Semiconductor |
Trans MOSFET N-CH 250V 51A Tube |
товар відсутній |
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FDPF51N25RDTU | Виробник : onsemi |
Description: MOSFET N-CH 250V 51A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F (LG-Formed) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V |
товар відсутній |