FDMS8350LET40 onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 159.73 грн |
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Технічний опис FDMS8350LET40 onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V, Power Dissipation (Max): 3.33W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V.
Інші пропозиції FDMS8350LET40 за ціною від 153.3 грн до 328.58 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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FDMS8350LET40 | Виробник : onsemi |
Description: MOSFET N-CH 40V 49A/300A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS8350LET40 | Виробник : ON Semiconductor | Trans MOSFET N-CH 40V 49A 8-Pin PQFN EP T/R |
товару немає в наявності |
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FDMS8350LET40 | Виробник : onsemi / Fairchild | MOSFET PT8 40V/20V NchPower Trench MOSFET |
товару немає в наявності |