![FDMS8050ET30 FDMS8050ET30](https://www.mouser.com/images/fairchildsemiconductor/lrg/PQFN_Power56_8_DSL.jpg)
на замовлення 8995 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 187.82 грн |
10+ | 171.51 грн |
25+ | 146.35 грн |
100+ | 130.32 грн |
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Технічний опис FDMS8050ET30 onsemi / Fairchild
Description: MOSFET N-CH 30V 55A/423A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V, Power Dissipation (Max): 3.3W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 750µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V.
Інші пропозиції FDMS8050ET30 за ціною від 122.7 грн до 204.3 грн
Фото | Назва | Виробник | Інформація |
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FDMS8050ET30 | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 5703 шт: термін постачання 21-31 дні (днів) |
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FDMS8050ET30 | Виробник : ON Semiconductor |
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товар відсутній |
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FDMS8050ET30 | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 299A; Idm: 1914A; 180W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 299A Pulsed drain current: 1914A Power dissipation: 180W Case: Power56 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 285nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDMS8050ET30 | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
товар відсутній |
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FDMS8050ET30 | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 299A; Idm: 1914A; 180W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 299A Pulsed drain current: 1914A Power dissipation: 180W Case: Power56 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 285nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |