FDMS3610S onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 25V 17.5/30A PWR56
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
на замовлення 6638 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 381+ | 57.18 грн |
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Технічний опис FDMS3610S onsemi
Description: MOSFET 2N-CH 25V 17.5/30A PWR56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A, Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: Power56.
Інші пропозиції FDMS3610S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FDMS3610S | Виробник : ON Semiconductor / Fairchild |
MOSFET Gaming/DT/Notebook NVDC/Server |
на замовлення 2801 шт: термін постачання 21-30 дні (днів) |
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FDMS3610S | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 17.5/30A PWR56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: Power56 |
товар відсутній |
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FDMS3610S | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 17.5/30A PWR56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: Power56 |
товар відсутній |