на замовлення 2490 шт:
термін постачання 395-404 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174 грн |
| 10+ | 142.66 грн |
| 100+ | 98.26 грн |
| 500+ | 83.63 грн |
| 1000+ | 70.39 грн |
| 3000+ | 67.39 грн |
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Технічний опис FDMD8440L onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power 3.3x5, Part Status: Active.
Інші пропозиції FDMD8440L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDMD8440L | Виробник : onsemi |
 Description: MOSFET 2N-CH 40V 21A PWR 3.3X5Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power 3.3x5 Part Status: Active |
товар відсутній |
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FDMD8440L | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power 3.3x5 Part Status: Active |
товар відсутній |