FCPF380N60-F152 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: 600V, N-CHANNEL, MOSFET, TO-220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
Description: 600V, N-CHANNEL, MOSFET, TO-220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
313+ | 67.49 грн |
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Технічний опис FCPF380N60-F152 Fairchild Semiconductor
Description: 600V, N-CHANNEL, MOSFET, TO-220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V.
Інші пропозиції FCPF380N60-F152
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FCPF380N60-F152 | Виробник : ON Semiconductor / Fairchild | MOSFET 650V, 380mOhm SuperFET II MOSFET |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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FCPF380N60-F152 | Виробник : ONSEMI |
Description: ONSEMI - FCPF380N60-F152 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
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FCPF380N60-F152 | Виробник : ON Semiconductor | Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Rail |
товар відсутній |
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FCPF380N60-F152 | Виробник : ON Semiconductor | Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Rail |
товар відсутній |
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FCPF380N60-F152 | Виробник : ON Semiconductor | Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Rail |
товар відсутній |
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FCPF380N60-F152 | Виробник : onsemi |
Description: MOSFET N-CH 600V 10.2A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V |
товар відсутній |