FCH041N65F-F155 ON Semiconductor / Fairchild
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FCH041N65F-F155 ON Semiconductor / Fairchild
Description: MOSFET N-CH 650V 76A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 7.6mA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V.
Інші пропозиції FCH041N65F-F155
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FCH041N65F-F155 | Виробник : ON Semiconductor | Trans MOSFET N-CH 650V 76A 3-Pin(3+Tab) TO-247 Tube |
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FCH041N65F-F155 | Виробник : onsemi |
Description: MOSFET N-CH 650V 76A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 7.6mA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V |
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FCH041N65F-F155 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Mounting: THT Case: TO247 Kind of package: tube Pulsed drain current: 228A Power dissipation: 595W Gate charge: 277nC Polarisation: unipolar Drain current: 76A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 36mΩ |
товар відсутній |