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ES3JBH Taiwan Semiconductor Corporation
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Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 31.66 грн |
12+ | 26.06 грн |
100+ | 18.1 грн |
500+ | 13.26 грн |
1000+ | 10.78 грн |
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Технічний опис ES3JBH Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 34pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
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Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ES3JBH | Виробник : Taiwan Semiconductor |
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ES3JBH | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 34pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
![]() |
ES3JBH | Виробник : Taiwan Semiconductor |
![]() |
товар відсутній |