ES3HBHM4G Taiwan Semiconductor

Description: DIODE GEN PURP 500V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 500 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 500 V, Qualification: AEC-Q101.