Технічний опис ES2CHE3_A/I Vishay
Description: DIODE GEN PURP 150V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції ES2CHE3_A/I
Фото | Назва | Виробник | Інформація |
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ES2CHE3_A/I | Виробник : Vishay |
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ES2CHE3_A/I | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 150V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape кількість в упаковці: 1 шт |
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ES2CHE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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ES2CHE3_A/I | Виробник : Vishay General Semiconductor |
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товар відсутній |
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ES2CHE3_A/I | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 150V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape |
товар відсутній |