Технічний опис DTC114ESA TP ROHM
Description: TRANS PREBIAS NPN 300MW SPT, Packaging: Tape & Box (TB), Package / Case: SC-72 Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: SPT, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Інші пропозиції DTC114ESA TP
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DTC114ESATP | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Box (TB) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SPT Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
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DTC114ESATP | Виробник : ROHM Semiconductor |
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DTC114ESA-TP | Виробник : Micro Commercial Components (MCC) | Bipolar Transistors - Pre-Biased |
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