Технічний опис DMTH8030LPDWQ-13 Diodes Inc
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 41W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V, Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Part Status: Active.
Інші пропозиції DMTH8030LPDWQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMTH8030LPDWQ-13 | Виробник : DIODES INCORPORATED |
 DMTH8030LPDWQ-13 Multi channel transistors |
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| DMTH8030LPDWQ-13 | Виробник : Diodes Zetex |
Dual Channel Enhancement Mode MOSFET |
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| DMTH8030LPDWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Part Status: Active |
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| DMTH8030LPDWQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V 100V PowerDI5060-8/SWP T&R 2.5K |
товар відсутній |