![DMTH8028LPSW-13 DMTH8028LPSW-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/3759/31~PowerDI5060-8(SWP)Type-UX~~8.jpg)
DMTH8028LPSW-13 Diodes Incorporated
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Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 3.9W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.47 грн |
5000+ | 14.11 грн |
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Технічний опис DMTH8028LPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Power Dissipation (Max): 3.9W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V.
Інші пропозиції DMTH8028LPSW-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DMTH8028LPSW-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товар відсутній |
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DMTH8028LPSW-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 |
товар відсутній |