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DMTH4M70SPGWQ-13 Diodes Incorporated
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Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
на замовлення 178000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2000+ | 120.26 грн |
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Технічний опис DMTH4M70SPGWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 460A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, Power Dissipation (Max): 5.6W (Ta), 428W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI8080-5, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20, Qualification: AEC-Q101.
Інші пропозиції DMTH4M70SPGWQ-13 за ціною від 115.42 грн до 268.96 грн
Фото | Назва | Виробник | Інформація |
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DMTH4M70SPGWQ-13 | Виробник : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 460A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V Power Dissipation (Max): 5.6W (Ta), 428W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI8080-5 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 Qualification: AEC-Q101 |
на замовлення 178700 шт: термін постачання 21-31 дні (днів) |
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DMTH4M70SPGWQ-13 | Виробник : Diodes Incorporated |
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на замовлення 1667 шт: термін постачання 21-30 дні (днів) |
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DMTH4M70SPGWQ-13 | Виробник : Diodes Inc |
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