Технічний опис DMTH4014LDVWQ-13 Diodes Inc
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W, Case: PowerDI3333-8, Mounting: SMD, On-state resistance: 25mΩ, Kind of package: reel; tape, Power dissipation: 2.6W, Polarisation: unipolar, Gate charge: 11.2nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 110A, Drain-source voltage: 40V, Drain current: 7.2A, Type of transistor: N-MOSFET x2, кількість в упаковці: 3000 шт.
Інші пропозиції DMTH4014LDVWQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMTH4014LDVWQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.6W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 40V Drain current: 7.2A Type of transistor: N-MOSFET x2 кількість в упаковці: 3000 шт |
товар відсутній |
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| DMTH4014LDVWQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.6W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 40V Drain current: 7.2A Type of transistor: N-MOSFET x2 |
товар відсутній |