DMTH3002LPS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 34.35 грн |
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Технічний опис DMTH3002LPS-13 Diodes Incorporated
Description: DIODES INC. - DMTH3002LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00125 ohm, PowerDI 5060, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 1.2W, Bauform - Transistor: PowerDI 5060, Anzahl der Pins: 8Pins, Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00125ohm, SVHC: Lead (23-Jan-2024).
Інші пропозиції DMTH3002LPS-13 за ціною від 32.15 грн до 94.6 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMTH3002LPS-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH3002LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00125 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00125ohm SVHC: Lead (23-Jan-2024) |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH3002LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00125 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00125ohm SVHC: Lead (23-Jan-2024) |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
на замовлення 2521 шт: термін постачання 21-30 дні (днів) |
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DMTH3002LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 400A Power dissipation: 2.5W Gate charge: 77nC Polarisation: unipolar Drain current: 240A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 2.5mΩ кількість в упаковці: 2500 шт |
товар відсутній |
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DMTH3002LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 400A Power dissipation: 2.5W Gate charge: 77nC Polarisation: unipolar Drain current: 240A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 2.5mΩ |
товар відсутній |