DMT6012LPSW-13 DIODES INCORPORATED
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Gate charge: 22.2nC
Drain-source voltage: 60V
Drain current: 10.5A
кількість в упаковці: 1 шт
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Технічний опис DMT6012LPSW-13 DIODES INCORPORATED
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V.
Інші пропозиції DMT6012LPSW-13
Фото | Назва | Виробник | Інформація |
Доступність |
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DMT6012LPSW-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V |
товар відсутній |
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DMT6012LPSW-13 | Виробник : Diodes Incorporated |
![]() |
товар відсутній |
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DMT6012LPSW-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Gate charge: 22.2nC Drain-source voltage: 60V Drain current: 10.5A |
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