на замовлення 4450 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.32 грн |
| 10+ | 59.38 грн |
| 100+ | 35.13 грн |
| 500+ | 29.41 грн |
| 1000+ | 24.97 грн |
| 3000+ | 22.78 грн |
| 6000+ | 22.15 грн |
Відгуки про товар
Написати відгук
Технічний опис DMPH4025SFVWQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V, Power Dissipation (Max): 2.3W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DMPH4025SFVWQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMPH4025SFVWQ-13 | Виробник : Diodes Inc |
 Trans MOSFET P-CH 40V 8.7A Automotive 8-Pin PowerDI EP T/R |
товар відсутній |
||
| DMPH4025SFVWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||
Type-UX;-;-8.jpg "DMPH4025SFVWQ-13") |
DMPH4025SFVWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V Power Dissipation (Max): 2.3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
DMPH4025SFVWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V Power Dissipation (Max): 2.3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |
|
| DMPH4025SFVWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |