DMPH4013SK3Q-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 40V 55A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.17 грн |
| 5000+ | 27.67 грн |
| 12500+ | 27.14 грн |
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Технічний опис DMPH4013SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 55A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMPH4013SK3Q-13 за ціною від 27.41 грн до 79.29 грн
| Фото | Назва | Виробник | Інформація |
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DMPH4013SK3Q-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V 55A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 135221 шт: термін постачання 21-31 дні (днів) |
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DMPH4013SK3Q-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V~40V TO252 T&R 2.5K |
на замовлення 4965 шт: термін постачання 21-30 дні (днів) |
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DMPH4013SK3Q-13 | Виробник : Diodes Inc |
Trans MOSFET P-CH 40V 55A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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| DMPH4013SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Mounting: SMD Drain current: -40A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 23mΩ Pulsed drain current: -120A Power dissipation: 3.7W Gate charge: 67nC Polarisation: unipolar кількість в упаковці: 2500 шт |
товар відсутній |
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| DMPH4013SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Mounting: SMD Drain current: -40A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 23mΩ Pulsed drain current: -120A Power dissipation: 3.7W Gate charge: 67nC Polarisation: unipolar |
товар відсутній |