DMPH2040UVTQ-7 Diodes Incorporated
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Description: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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3000+ | 13.33 грн |
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Технічний опис DMPH2040UVTQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMPH2040UVTQ-7 за ціною від 13.47 грн до 39.54 грн
Фото | Назва | Виробник | Інформація |
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DMPH2040UVTQ-7 | Виробник : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMPH2040UVTQ-7 | Виробник : Diodes Inc |
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товар відсутній |
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DMPH2040UVTQ-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26 Application: automotive industry Mounting: SMD Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A Case: TSOT26 кількість в упаковці: 1 шт |
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DMPH2040UVTQ-7 | Виробник : Diodes Incorporated |
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товар відсутній |
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DMPH2040UVTQ-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26 Application: automotive industry Mounting: SMD Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A Case: TSOT26 |
товар відсутній |