Технічний опис DMP6110SVTQ-13 Diodes Inc
Description: MOSFET P-CH 60V 7.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Інші пропозиції DMP6110SVTQ-13
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DMP6110SVTQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Case: TSOT26 Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -24A Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 0.13Ω Type of transistor: P-MOSFET кількість в упаковці: 10000 шт |
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DMP6110SVTQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
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DMP6110SVTQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
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DMP6110SVTQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Case: TSOT26 Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -24A Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 0.13Ω Type of transistor: P-MOSFET |
товар відсутній |