DMP6110SVT-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 12.88 грн |
| 30000+ | 12.12 грн |
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Технічний опис DMP6110SVT-13 Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Інші пропозиції DMP6110SVT-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMP6110SVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-13 | Виробник : Diodes Inc |
Trans MOSFET P-CH 60V 7.3A 6-Pin TSOT-26 T/R |
товару немає в наявності |
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DMP6110SVT-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -24A Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: TSOT26 Power dissipation: 1.1W кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMP6110SVT-13 | Виробник : Diodes Incorporated |
MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs |
товару немає в наявності |
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DMP6110SVT-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -24A Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: TSOT26 Power dissipation: 1.1W |
товару немає в наявності |