на замовлення 2684 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 34.69 грн |
12+ | 29.22 грн |
100+ | 17.67 грн |
500+ | 13.77 грн |
1000+ | 10.01 грн |
2500+ | 9.94 грн |
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Технічний опис DMP6110SFDF-13 Diodes Incorporated
Description: MOSFET P-CH 60V 4.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.97W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Інші пропозиції DMP6110SFDF-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP6110SFDF-13 | Виробник : Diodes Inc | Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
товару немає в наявності |
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DMP6110SFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMP6110SFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.97W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
товару немає в наявності |
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DMP6110SFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.97W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
товару немає в наявності |
||
DMP6110SFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET |
товару немає в наявності |