DMP610DLQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Qualification: AEC-Q101
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.93 грн |
6000+ | 3.51 грн |
9000+ | 2.91 грн |
30000+ | 2.68 грн |
75000+ | 2.41 грн |
150000+ | 2.09 грн |
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Технічний опис DMP610DLQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 186mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DMP610DLQ-7 за ціною від 2.52 грн до 25.01 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP610DLQ-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K |
на замовлення 1710 шт: термін постачання 21-30 дні (днів) |
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DMP610DLQ-7 | Виробник : Diodes Inc | MOSFET BVDSS: 41V60V SOT23 T&R 3K |
товар відсутній |
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DMP610DLQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Gate charge: 560pC Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω кількість в упаковці: 10 шт |
товар відсутній |
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DMP610DLQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Gate charge: 560pC Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω |
товар відсутній |