Технічний опис DMP57D5UFB-7 Diodes Inc
Description: MOSFET P-CH 50V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V, Power Dissipation (Max): 425mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V.
Інші пропозиції DMP57D5UFB-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP57D5UFB-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Power Dissipation (Max): 425mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V |
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