DMP4025SFG-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 40V 4.65A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
на замовлення 624000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.42 грн |
| 6000+ | 13.18 грн |
| 9000+ | 12.24 грн |
| 30000+ | 11.22 грн |
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Технічний опис DMP4025SFG-13 Diodes Incorporated
Description: MOSFET P-CH 40V 4.65A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Power Dissipation (Max): 810mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V.
Інші пропозиції DMP4025SFG-13 за ціною від 11.67 грн до 42.58 грн
| Фото | Назва | Виробник | Інформація |
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DMP4025SFG-13 | Виробник : Diodes Incorporated |
MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A |
на замовлення 24604 шт: термін постачання 21-30 дні (днів) |
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DMP4025SFG-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V 4.65A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V |
на замовлення 627259 шт: термін постачання 21-31 дні (днів) |
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| DMP4025SFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -5.77A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.95W Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
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| DMP4025SFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -5.77A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.95W Polarisation: unipolar |
товар відсутній |