DMP4011SK3-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
кількість в упаковці: 2500 шт
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Технічний опис DMP4011SK3-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252, Kind of package: reel; tape, Gate charge: 52nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: TO252, Pulsed drain current: -200A, Drain-source voltage: -40V, Drain current: -11A, On-state resistance: 19mΩ, Type of transistor: P-MOSFET, Mounting: SMD, Power dissipation: 3.1W, Polarisation: unipolar, кількість в упаковці: 2500 шт.
Інші пропозиції DMP4011SK3-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMP4011SK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 40V 14A/74A TO252 |
товар відсутній |
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DMP4011SK3-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
товар відсутній |
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| DMP4011SK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252 Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -200A Drain-source voltage: -40V Drain current: -11A On-state resistance: 19mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar |
товар відсутній |