DMP32D4S-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 30V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.2 грн |
| 6000+ | 5.84 грн |
| 9000+ | 5.17 грн |
| 30000+ | 4.79 грн |
| 75000+ | 4.07 грн |
| 150000+ | 3.91 грн |
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Технічний опис DMP32D4S-7 Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V.
Інші пропозиції DMP32D4S-7 за ціною від 4.3 грн до 30.61 грн
| Фото | Назва | Виробник | Інформація |
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DMP32D4S-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 300MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V |
на замовлення 243574 шт: термін постачання 21-31 дні (днів) |
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DMP32D4S-7 | Виробник : Diodes Incorporated |
MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA |
на замовлення 27213 шт: термін постачання 21-30 дні (днів) |
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DMP32D4S-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.54W Polarisation: unipolar Gate charge: 1.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -30V Drain current: -0.25A On-state resistance: 4Ω Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
товар відсутній |
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DMP32D4S-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -1A; 540mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.54W Polarisation: unipolar Gate charge: 1.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -30V Drain current: -0.25A On-state resistance: 4Ω Type of transistor: P-MOSFET |
товар відсутній |