DMP3105LVT-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
на замовлення 141000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.98 грн |
6000+ | 4.57 грн |
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Технічний опис DMP3105LVT-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.15W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V.
Інші пропозиції DMP3105LVT-7 за ціною від 5.46 грн до 33.53 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP3105LVT-7 | Виробник : Diodes Inc | Trans MOSFET P-CH 30V 3.9A 6-Pin TSOT-26 T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP3105LVT-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 3.1A TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V |
на замовлення 144295 шт: термін постачання 21-31 дні (днів) |
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DMP3105LVT-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K |
на замовлення 4847 шт: термін постачання 21-30 дні (днів) |
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DMP3105LVT-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.75W Polarisation: unipolar Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Drain-source voltage: -30V кількість в упаковці: 1 шт |
товару немає в наявності |
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DMP3105LVT-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.75W Polarisation: unipolar Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Drain-source voltage: -30V |
товару немає в наявності |