![DMP3048LSD-13 DMP3048LSD-13](https://ce8dc832c.cloudimg.io/v7/_cdn_/3F/80/C0/00/0/788723_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new_render3d.png&wat_scale=100p&ci_sign=9afc7c7650ba6126cace1d548d0fd8558b13e99a)
DMP3048LSD-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Polarisation: unipolar
On-state resistance: 80mΩ
Kind of package: reel; tape
Drain current: -3.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 29.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -35A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.7W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Polarisation: unipolar
On-state resistance: 80mΩ
Kind of package: reel; tape
Drain current: -3.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 29.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -35A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.7W
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DMP3048LSD-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8, Polarisation: unipolar, On-state resistance: 80mΩ, Kind of package: reel; tape, Drain current: -3.8A, Drain-source voltage: -30V, Case: SO8, Gate charge: 29.6nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: -35A, Type of transistor: P-MOSFET, Mounting: SMD, Power dissipation: 1.7W, кількість в упаковці: 1 шт.
Інші пропозиції DMP3048LSD-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DMP3048LSD-13 | Виробник : Diodes Incorporated |
![]() |
товар відсутній |
||
![]() |
DMP3048LSD-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8 Polarisation: unipolar On-state resistance: 80mΩ Kind of package: reel; tape Drain current: -3.8A Drain-source voltage: -30V Case: SO8 Gate charge: 29.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -35A Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.7W |
товар відсутній |