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DMP3021SFVWQ-13 Diodes Incorporated
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Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
на замовлення 1529 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 47.14 грн |
10+ | 39.1 грн |
100+ | 27.03 грн |
500+ | 21.2 грн |
1000+ | 18.04 грн |
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Технічний опис DMP3021SFVWQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V.
Інші пропозиції DMP3021SFVWQ-13 за ціною від 16.17 грн до 52.64 грн
Фото | Назва | Виробник | Інформація |
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DMP3021SFVWQ-13 | Виробник : Diodes Incorporated |
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на замовлення 2949 шт: термін постачання 21-30 дні (днів) |
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DMP3021SFVWQ-13 | Виробник : Diodes Inc |
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товар відсутній |
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DMP3021SFVWQ-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Application: automotive industry Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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DMP3021SFVWQ-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V |
товар відсутній |
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DMP3021SFVWQ-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Application: automotive industry Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
товар відсутній |