DMP3007LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 30V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.04 грн |
| 5000+ | 24.8 грн |
| 12500+ | 23.66 грн |
| 25000+ | 22.16 грн |
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Технічний опис DMP3007LSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 14A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V.
Інші пропозиції DMP3007LSS-13 за ціною від 25.44 грн до 69.37 грн
| Фото | Назва | Виробник | Інформація |
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DMP3007LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 14A 8SO T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 45821 шт: термін постачання 21-31 дні (днів) |
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DMP3007LSS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 3007 шт: термін постачання 21-30 дні (днів) |
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DMP3007LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; Idm: -120A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Power dissipation: 2.1W Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 12mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -120A кількість в упаковці: 2500 шт |
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DMP3007LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; Idm: -120A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Power dissipation: 2.1W Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 12mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -120A |
товар відсутній |