DMP25H18DLFDE-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
на замовлення 252000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 41.5 грн |
| 6000+ | 38.06 грн |
| 9000+ | 36.3 грн |
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Технічний опис DMP25H18DLFDE-7 Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±40V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V.
Інші пропозиції DMP25H18DLFDE-7 за ціною від 36.74 грн до 100.14 грн
| Фото | Назва | Виробник | Інформація |
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DMP25H18DLFDE-7 | Виробник : Diodes Incorporated |
MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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DMP25H18DLFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 250V 260MA 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V |
на замовлення 254348 шт: термін постачання 21-31 дні (днів) |
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| DMP25H18DLFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товар відсутній |
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| DMP25H18DLFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 |
товар відсутній |