Технічний опис DMP2225LQ-7 Diodes Inc
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 4.5V, Power Dissipation (Max): 1.08W, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP2225LQ-7
Фото | Назва | Виробник | Інформація |
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DMP2225LQ-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.225Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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DMP2225LQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 4.5V Power Dissipation (Max): 1.08W Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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DMP2225LQ-7 | Виробник : Diodes Incorporated |
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товар відсутній |
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DMP2225LQ-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.225Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |