Технічний опис DMNH6065SPDW-13 Diodes Inc
Description: MOSFET 2N-CH 60V 27A POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 68W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V, Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R).
Інші пропозиції DMNH6065SPDW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMNH6065SPDW-13 | Виробник : Diodes Zetex |
 Trans MOSFET N-CH 60V 27A 8-Pin PowerDI EP T/R |
товар відсутній |
|
| DMNH6065SPDW-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 108A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
||
| DMNH6065SPDW-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 27A POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 68W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) |
товар відсутній |
||
 |
DMNH6065SPDW-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K |
товар відсутній |
|
| DMNH6065SPDW-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 108A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |