DMNH6022SSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 30.81 грн |
5000+ | 28.26 грн |
12500+ | 26.95 грн |
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Технічний опис DMNH6022SSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A, Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMNH6022SSDQ-13 за ціною від 27.34 грн до 79.45 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMNH6022SSDQ-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMNH6022SSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22559 шт: термін постачання 21-31 дні (днів) |
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DMNH6022SSDQ-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 5336 шт: термін постачання 21-30 дні (днів) |
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DMNH6022SSDQ-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R |
товар відсутній |
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DMNH6022SSDQ-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R |
товар відсутній |
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DMNH6022SSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 On-state resistance: 30mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 45A Power dissipation: 2.1W Gate charge: 32nC Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 60V кількість в упаковці: 2500 шт |
товар відсутній |
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DMNH6022SSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 On-state resistance: 30mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 45A Power dissipation: 2.1W Gate charge: 32nC Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 60V |
товар відсутній |