Технічний опис DMN601WKQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323, Kind of package: reel; tape, Mounting: SMD, Case: SOT323, Drain-source voltage: 60V, Drain current: 0.3A, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 0.2W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 0.8A, кількість в упаковці: 10000 шт.
Інші пропозиції DMN601WKQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMN601WKQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A кількість в упаковці: 10000 шт |
товар відсутній |
|
 |
DMN601WKQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V SOT323 |
товар відсутній |
|
|
|
DMN601WKQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
товар відсутній |