DMN601DWKQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.85 грн |
| 6000+ | 4.47 грн |
| 9000+ | 3.86 грн |
| 30000+ | 3.56 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN601DWKQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN601DWKQ-7 за ціною від 3.51 грн до 28.95 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN601DWKQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 65080 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMN601DWKQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 44896 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DMN601DWKQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 10 шт |
товар відсутній |
|||||||||||||||||
|
|
DMN601DWKQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |