DMN6013LFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2000+ | 20.14 грн |
6000+ | 18.38 грн |
10000+ | 17.02 грн |
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Технічний опис DMN6013LFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V.
Інші пропозиції DMN6013LFG-7 за ціною від 18.59 грн до 56.85 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMN6013LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.3A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V |
на замовлення 23173 шт: термін постачання 21-31 дні (днів) |
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DMN6013LFG-7 | Виробник : Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 20Vgs 10.3A 2577pF |
на замовлення 14160 шт: термін постачання 21-30 дні (днів) |
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DMN6013LFG-7 | Виробник : Diodes Inc | Trans MOSFET N-CH 60V 10.3A 8-Pin PowerDI EP T/R |
товар відсутній |
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DMN6013LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A кількість в упаковці: 2000 шт |
товар відсутній |
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DMN6013LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.3A; Idm: 58.3A; 2.1W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 8.3A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 55.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 58.3A |
товар відсутній |