DMN4800LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
на замовлення 427500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 10.62 грн |
5000+ | 9.71 грн |
12500+ | 9.02 грн |
25000+ | 8.27 грн |
62500+ | 8.05 грн |
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Технічний опис DMN4800LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Power Dissipation (Max): 1.46W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V.
Інші пропозиції DMN4800LSS-13 за ціною від 9.38 грн до 32.92 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMN4800LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 1.46W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
на замовлення 427970 шт: термін постачання 21-31 дні (днів) |
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DMN4800LSS-13 | Виробник : Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE |
на замовлення 5396 шт: термін постачання 21-30 дні (днів) |
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DMN4800LSS-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 8.6A 8-Pin SOP T/R |
товар відсутній |
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DMN4800LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 50A Power dissipation: 1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN4800LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 50A Power dissipation: 1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20mΩ Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |