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DMN3060LCA3-7 Diodes Incorporated
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Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
на замовлення 4100 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
12+ | 27.37 грн |
15+ | 20.35 грн |
100+ | 12.22 грн |
500+ | 10.62 грн |
1000+ | 7.22 грн |
2000+ | 6.65 грн |
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Технічний опис DMN3060LCA3-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V, Power Dissipation (Max): 790mW, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X4-DSN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V.
Інші пропозиції DMN3060LCA3-7 за ціною від 5.83 грн до 29.77 грн
Фото | Назва | Виробник | Інформація |
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DMN3060LCA3-7 | Виробник : Diodes Incorporated |
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на замовлення 8370 шт: термін постачання 21-30 дні (днів) |
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DMN3060LCA3-7 | Виробник : Diodes Inc |
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товар відсутній |
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DMN3060LCA3-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 1.35W Polarisation: unipolar Gate charge: 1.118nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Mounting: SMD Case: X4-DSN1006-3 кількість в упаковці: 10000 шт |
товар відсутній |
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DMN3060LCA3-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V |
товар відсутній |
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DMN3060LCA3-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 1.35W Polarisation: unipolar Gate charge: 1.118nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Mounting: SMD Case: X4-DSN1006-3 |
товар відсутній |